Abstract
Abstract We experimentally investigate the equivalent circuit parameters of hybrid quantum-dot (QD) solar cells consisted of InAs/GaAs and GaSb/GaAs QDs. The hybrid QD solar cell samples are fabricated by stacking one pair and three pairs of InAs/GaAs and GaSb/GaAs QD layers. Four equivalent circuit models are applied to fit the experimentally obtained current-voltage characteristics of the investigated samples. The relevant circuit parameters are photocurrent, reverse saturation current, diode ideality factor, series resistance, and shunt resistance. The best fitted model of all samples contains both series and shunt resistances. According to the fitting result, the diode ideality factor of 2, which indicates the dominant recombination current, is always obtained. Comparing the extracted parameters from two single-pair hybrid QD solar cells, the effects of structural stacking sequence can be discussed in term of light absorption and carrier storage properties. We have found that an increase of stacking number from one pair to three pairs deteriorates the solar cell performance. This might be caused by an excessive total QD layer thickness or a presence of dislocation defects in that sample.
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