Abstract
Polycrystalline zinc nitride (Zn 3N 2) thin films are prepared by reactive rf magnetron sputtering with different N 2 concentrations in sputtering gases (N 2–Ar mixtures). Structure and chemical bonding states are measured with X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. Single phase Zn 3N 2 film formation and texture strongly depend on N 2 concentration. Polycrystalline Zn 3N 2 films are formed at N 2 concentrations over 20% and show a 100 preferred orientation. The XPS N 1s peak (395.8 eV) for Zn 3N 2 indicates a large chemical shift of 3.0 eV from the N 1s peak for free amine (398.8 eV) indicative of the formation of N–Zn bonds. Moreover, the modified Auger parameter, which is a good measure of the chemical state, is determined to be 2012.3 eV for Zn 3N 2 from XPS measurements. This value is significantly different from the values for ZnO and metallic zinc. The polycrystalline Zn 3N 2 films show a high electron mobility of about 100 cm 2 V −1 s −1 at room temperature. Zn 3N 2 is determined to be an n-type semiconductor with direct gap of 1.23±0.02 eV.
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