Abstract

Compared to other electrical energy storage devices, dielectric capacitors provide advantages like high power density, fast charge and discharge times, thermal stability, excellent mechanical strength, and a long cycling lifetime. Amongst the various dielectric materials, relaxor ferroelectric materials offer low remanent polarization and high energy efficiency. Previous research has shown that (i) doping Bi3+ ions into perovskite material can achieve improved results because its valence electronic configuration is close to that of Pb2+ and its ionic radius is also comparable to that of Ba2+, and (ii) introducing complex ions at the B-site can reduce the long-range ferroelectric order and result in the occurrence of polar nano regions.The present work aims at (i) incorporating both these strategies for the synthesis of the dielectric ceramic material and (ii) studying the structural, morphological, and dielectric properties of the prepared material. We have successfully synthesized (1-x) Ba0.65Sr0.35TiO3 – x BiMg2/3Nb1/3O3 with the help of a conventional solid-state reaction technique. The XRD analysis demonstrates the formation of cubic perovskite structure with space group Pm3m. The diffraction peaks shift towards lower 2θ angles with an increasing concentration of BMN, indicating a regular increase in unit cell volumes owing to the substitution of the smaller Ti4+ ions with bigger Mg2+ and Nb5+ ions. FESEM images illustrate the development of a homogeneous and dense microstructure. Element mapping analysis confirms the uniform distribution of all the elements within the prepared sample. From the dielectric measurements, we found that with the increase in doping, the dielectric peak broadens, and the frequency dispersion increases, indicating a rise in the relaxor behavior, which may be attributed to the increase in cation disorder due to the substitution of Bi3+ and [Mg2/3Nb1/3]4+ at the A- and B-site, respectively. The excellent dielectric properties indicate that (1-x)BST-xBMN is a promising ceramic material for use as a dielectric in capacitors for advanced pulsed power applications and consumer electronic devices.

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