Abstract
Lead-free V doped Barium Zirconium Titanate (BZT) ceramic was synthesized by conventional solid-state reaction method. Single phase of ceramic material was confirmed by XRD analysis. Rietveld refinement of XRD data shows that the sample has tetragonal phase having space group P4/mmm. Surface morphology was analyzed by scanning electron microscopy (SEM) shows grains were random and irregular in shape. In the dielectric properties, the effect of frequency and temperature on dielectric constant was investigated. The substitution of V ion on B site decreases the Curie temperature than pure BaTiO3. Theoretical fitting of Curie–Weiss law and Power law of dielectric data was confirmed the diffused phase transition in ceramic material. Doping of V in BZT has ferroelectric character with large value of remnant polarization, coercive field and Pr/Ps ratio. The results shows that the studied composition is suitable for capacitor applications.
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