Structural deformation reduction of ZnTe heteroepitaxial layers grown on GaAs (0 0 1) substrates by using low-temperature buffer

Abstract

We report MBE growth of ZnTe layer by using a low-temperature ZnTe buffer. A thin buffer layer was inserted at 250 °C (LT-buffer) and the film growth was followed at 300 °C. The effect of LT-buffer to the structural quality of high-temperature-grown ZnTe layer was investigated. Two-dimensional reciprocal space mapping (RSM) results of the ZnTe layers clearly indicate that the deformation of the ZnTe layer is greatly reduced by introducing the LT-ZnTe buffer.