Structural defects in CdTe crystals grown by two different vapour phase techniques

Abstract

The structural defects present in large single crystals of CdTe grown at the same temperature by two different vapour phase techniques have been investigated using a range of techniques including TEM, SEM, EBIC, EDX and chemical etching. The contrasting defect content of the differently grown crystals can be explained by the considerable difference in the periods taken to grow the crystals by the separate techniques. In the crystals grown by the slower method, the development of both sub-grain boundaries and precipitates reaches a much more advanced stage than in those grown by the faster technique.