Abstract
This work reports the detailed analysis of the structure and optoelectronic properties of spin coated Zn2−xPbxSnO4 nanostructured films. XRD studies reveal the polycrystalline cubic inverse spinel structure while Raman spectra show the dominance of T2 g(3) mode and decrease in intensity of A1 g mode with Pb doped ZTO films. X-ray photoelectron spectroscopy substantiates the dominance of atom in multiple charge states and their possible substitutions in the host lattice. The maximum average transparency of 87% in 400–650 nm spectral region for x = 0.08 sample while the decrease in optical gap from 4.32 to 4.14 eV with minimal value of 4.04 eV for x = 0.04 is found. The refractive index at 500 nm is calculated using Swanepoel’s method and found to decrease from 1.72 for ZTO and 1.59 for x = 0.08 sample. The carrier concentration increases from 1018 cm−3 for ZTO to 1020 cm−3 for x = 0.08 sample. The minimal value of electrical resistivity of 2.17 × 10−3 Ω-cm and maximal Haacke’s Figure of merit (FOM) of 1.1 × 10−3/ Ω is obtained for x = 0.08. These results are significant advancement to the development of ZTO based transparent conductors for highly efficient futuristic optoelectronics and photovoltaic devices.
Published Version
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