Abstract
The structural characteristics of silicon samples containing one and two Si1 − xGex/Si quantum wells 1.8 to 15 nm thick were determined by high-resolution X-ray diffraction. A detailed analysis of X-ray rocking curves made it possible to reproduce the Ge-concentration profiles in the quantum wells. The diffusion of germanium (up to 20%) into interface layers was observed, with a consequent broadening of the quantum well interfaces.
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