Structural characterization of InSb thin films grown by electrodeposition

Abstract

In the present work we have grown InSb thin films on brass substrates, using the electrodeposition technique. The electrochemical baths used in the growth were made up of aqueous solutions of InCl3 and SbCl3 mixed together in various proportions. The films grown were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive Analysis of X-rays (EDAX). Compositional studies show that stoichiometric InSb films can be prepared from a bath containing 0.05M InCl3 and 0.04M SbCl3. XRD studies reveal that the films grown are polycrystalline having the zinc blende structure with (111) orientation. Crystallite size, dislocation density and strain were calculated using the XRD results. Optical transmission spectra were recorded using an FTIR spectrophotometer. The value of direct band gap was found to be around 0.20 eV for the thin films having the best stoichiometry.