Abstract
X-ray diffraction (XRD) reciprocal space mappings (RSMs) and transmission electron microscopy (TEM) were applied to structurally characterize InGaN multi-quantum-well (MQW) alloys with a novel structure which were epi-grown successively on a rough thick n-InGaN layer with {101¯m} (2<m<6) faceted surface, by plasma assisted molecular beam epitaxy (MBE) on c-plane sapphire. In spite of the rugged surface of n-InGaN, the morphology of MQWs derives from the underlying InGaN layer with a special profile of V shape (named as V-MQWs). The direction of stacking for growing V-MQWs remains in [0001] direction. The process of growth was governed in the regime of Frank-van der Merwe. Spontaneous composition modulation of InGaN, with〈101¯m〉modulation direction, was observed by TEM and unconventional shift of satellite peaks in reciprocal space took place in XRD (101¯5) RSM. The two scarce phenomena are attributed to the special morphology of V-MQWs.
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