Abstract
In this paper, HfNx-based films on SiO2/Si stack were grown by metal organic chemical vapor deposition (MOCVD), and one of them was ex-situ annealed at elevated temperature. The structural parameters of HfNx-based films for the as-grown and the post-growth annealing samples were characterized by Rutherford back-scattering spectrometry (RBS), Spectroscopic Ellipsometry (SE) and atomic force microscopy (AFM). The measurements of the post-growth annealing sample by RBS demonstrated that the N: Hf ratio of HfNx-based films would decrease with depth increase. In addition, The SE results for the structure of HfNx-based nitride films were in good agreement with those determined by RBS.
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