Abstract
AbstractGeSn alloy nanocrystals were formed by implantation of Ge and Sn ions into an amorphous SiO2 matrix and subsequent thermal annealing. High resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM) with a high angle annular dark field (HAADF) detector were used to show that phase-segregated crystalline bi-lobe nanocrystals were formed. Rapid melting and solidification using a single excimer laser pulse transformed the bi-lobe structure into a homogeneously mixed amorphous structure. Raman spectroscopy was used to monitor the crystalline nature and approximate grain size of the Ge portion of the nanocrystals after each heat treatment, and the Raman spectra were compared with the TEM images.
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