Abstract
(110)-oriented epitaxial Mg2Si films were grown on (100), (110), and (111) MgO single crystals by RF magnetron sputtering. Two, one, and three types of in-plane variants were observed for (100), (110), and (111) MgO single crystals, respectively. In addition, it was also demonstrated that epitaxial Mg2Si films can be grown on (001) Al2O3 substrates using an epitaxially grown (111) MgO buffer layer. Transmission electron microscopy studies revealed a clear interface between Mg2Si and the MgO buffer layer with an epitaxial relationship. This result indicates that Mg2Si films can be epitaxially grown on other substrates by using an epitaxial buffer layer of MgO.
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