Abstract
The infrared transmission characteristics of “combination oxides” consisting of initially growing a thin thermal SiO2 layer (to achieve interface properties equivalent to thermal SiO2) followed by sputter deposited SiO2, for bulk oxide growth (a low temperature deposition process), are studied to see the feasibility of substituting these oxides for dry thermal silicon oxides. In this study, “combination oxides”, grown on both p- and n-type silicon substrates were compared with dry thermal oxides of identical thicknesses. The infrared transmission results indicate that the vibration frequency (v) and full-width at half-maximum (FWHM) of dominant IR active mode of combination oxides differ only by ≈7 cm-1 from those of dry thermal oxides, thereby indicating a comparable stoichiometery of the former oxides to the latter.
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