Structural changes of hot-wire CVD silicon carbide thin films induced by gas flow rates

Abstract

Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition in a CH 4 gas flow rate of 1 sccm, and the influence of the gas flow rates of SiH 4 and H 2 gases on the film structure and properties were investigated. In the case of a H 2 gas flow rate below 100 sccm, the SiC:H films obtained in SiH 4 gas flow rates of 3 and 4 sccm were amorphous. On the other hand, when the H 2 gas flow rate was above 150 sccm, SiH 4 gas flow rates of 4 and 3 sccm resulted in a Si-crystallite-embedded amorphous SiC:H film and a nanocrystalline cubic SiC film, respectively. It was found that gas flow rates were important parameters for controlling film structure.