Abstract
Abstract The present work encloses structural and optical characterization of copper (I) selenide (Cu2Se) thin films. The films having thickness 85 nm have been deposited using thermal evaporation technique in initial step of work. The structural and morphological studies of deposited thin films are then done by X-ray diffraction (XRD), scanning electron microscope (SEM), and surface profilometer measurements. Later on, ultraviolet-visible-near-infrared (UV-VIS-NIR) spectrophotometer and Raman spectroscopic measurements are performed for optical characterization of films. The structure and morphology measurements reveal that deposited material of films is crystalline. The optical band gap estimated from the optical transmission spectra of the film has been found 1.90 eV. The mean values of refractive index, extinction coefficient, real and imaginary dielectric constant are received 3.035, 0.594, 9.623, and 3.598, respectively. The obtained results are compared and analyzed for justification and application of Cu2Se thin films.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
