Abstract
Thin films of CuPc of various thicknesses have been deposited onto clean glass substrates using thermal evaporation technique at room temperature. The structural studies, using X-ray diffractometry and IR spectral analysis, showed that the films are mainly of β- form with preferential orientation of the plane (100). The dark electrical resistivity and the thermoelectric power measurements were carried out at different temperatures in the range 300-450 K. Room temperature current density-voltage characteristics showed ohmic conduction in the lower voltage range and spacecharge-limited – conductivity (SCLC) in the relatively high voltage. The SCLC are controlled by an exponential distribution of traps above the valence band edge. The temperature dependence of current density allows the calculations of some essential parameters such as the hole mobility, the relative permittivity, the trap concentration, the characteristic temperature and the trap density
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