Abstract
Nanocomposite made of La0.7Sr0.3MnO3 (LSMO) and reduced graphene oxide (rGO) is a promising candidate for non-volatile memory application in oxide electronics. Here, we report bipolar resistive switching (RS) behaviour in (1-x)LSMO.(x)rGO nanocomposite system, for 0.001 ≤x≤ 0.010. The structural characterization revealed the presence of individual constituent phases. The switching behaviour is observed to be very stable over 1000 switching cycles and robust against different voltage sweeping rates with a minimum switching speed of 1.1 μs. An oxygen vacancy induced conduction filament based model is proposed to understand the origin of the switching phenomenon and similar observation is made through high-resolution transmission electron microscopy (HRTEM) measurements.
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