Charge transport and resistive switching in a 2D hybrid interface

Abstract

With the recent surge of emerging memory technologies, the demand for storage capacities in various applications is more than ever. Oxide material based memory elements are promising candidates for designing future non-volatile storage architectures. In this work, we investigated the structural, transport and resistive switching (RS) behaviour of a novel hybrid structure made of calcium doped LaMnO3 (LCMO) and reduced graphene oxide (rGO). Very stable and robust bipolar RS behaviour was observed with additional tunability obtained through the variation in the rGO concentration in the structure. The presence of a metal to insulator transition is clearly observed with a lowering of the transition temperature on increase in the rGO content. Both the effects can be attributed to the oxygen vacancy generation and filament formation as confirmed from the X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM) measurements. The combined attributes of easy fabrication route, robust switching behaviour and environmental stability of the present system makes it a superior candidate for future non-volatile memory design and oxide electronics.