Abstract
We report the bi-epitaxial growth of ZnO and resistance switching characteristics of Pt/ZnO/TiN-based heterojunction devices fabricated on Si(001) substrates by pulsed laser deposition. The structural properties of the heterostructures characterized by XRD (θ-2θ, φ scans) and TEM confirm that the ZnO films having hexagonal wurtzite structure (six-fold symmetry) grow bi-epitaxially on the TiN buffer layer (four-fold symmetry). The Pt(111) grows epitaxially on ZnO(0001). The epitaxial relationship between the various films is given as (111)Pt ‖ (0001)ZnO ‖ (001)TiN ‖ (001)Si and [100]TiN ‖ [100]Si, [21¯1¯0]ZnO ‖ [110]TiN or [101¯0]ZnO ‖ [110]TiN, and [101¯]Pt ‖ [21¯1¯0]ZnO. The effect of ZnO growth temperature on the electrical properties of Pt/ZnO/TiN devices is studied and correlated with the microstructure of the ZnO/TiN interface. The Pt/ZnO/TiN devices exhibited good bi-polar resistance switching characteristics at voltages as low as ±1 V.
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