Abstract
A highly (00l) oriented Pb(Mg1/3Nb2/3)O3 (PMN) thin film was successfully grown on a TiN buffered Si(001) substrate. The TiN buffer layer was epitaxially grown with an orientation relationship of [110](001)TiN∥[110](001)Si on Si(001) by pulsed laser deposition. The PMN films were deposited using a radio-frequency magnetron sputtering technique at 500–700°C. The crystallinity, epitaxial nature and microstructures of the fabricated multi-films were investigated using X-ray diffraction and transmission electron microscopy. It was found that a PMN thin film deposited at 650°C shows a dense columnar structure with preferential (001) orientation suggesting the possibility of growing epitaxial PMN thin films on Si substrates using a TiN buffer layer.
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