Abstract
Tantalum oxide crystals encrusted in a silicon oxide matrix were synthesized by using a hot filament chemical vapor deposition system (HFCVD). A solid source composed by a mixture in different percentages of Ta2O5 and silicon (Si) powders were used as reactants. The films were grown at 800°C and 1000°C under hydrogen ambient. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) at room temperature. From the XPS results it was confirmed the formation of a mixture of Tantalum oxide, silicon oxide and Si nanoparticles (Ta2O5-SiO2-Si(nc)) as seen from the Si (2p) and Ta (4f) lines corresponding to Si+ and Ta+ states respectively. Ta2O5 and Si nanocrystals (Si-NCs) embedded in the silicon oxide films were observed on HRTEM images which corroborate the XPS results. Finally the emission properties of the films exhibited a broad band from 400 to 850nm caused by the independent PL properties of tantalum oxide and Si-NCs that compose the film. The intensity of the emissions was observed to be dependent on both temperature of deposition and the ratio Ta2O5/Si, used as initial reactants. Results from this work might supply useful data for the development of future light emitter devices.
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