Abstract
GaN epilayer grown on Si (111) substrate by a novel vacuum reaction method rather than metal organic chemical vapor deposition or molecule beam epitaxy is reported. Scanning electron micrograph shows that surface of GaN film is flat and crack-free. A pronounced GaN (0002) peak appears in the x-ray diffraction pattern. The full width at half-maximum (FWHM) of the double-crystal x-ray rocking curve for (0002) diffraction from the GaN epilayer is 30 arcmin. The photoluminescence spectrum shows that the GaN epilayer emits light at the wavelength of 365 nm with an FWHM of 8 nm (74.6 meV).
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