CBE-grown high-quality GaAs on Si substrate

Abstract

We have reported that the crystallinity of GaAs on Si (GaAs/Si) grown by chemical beam epitaxy (CBE) depends on the growth temperatures of the top GaAs and nucleation layers. The GaAs layer on Si, grown at 500°C for the top GaAs layer and 400°C for the nucleation layer, exhibited a high crystal quality even at a lower growth temperature of 500°C. By performing in-situ thermal cycle annealing for thisGaAs/Si, the values of etch pit density and the full width at half maximum of X-ray double-crystal measurement were2.3 × 10 7cm −2and 147 arcsec, respectively. These samples were superior to those grown by the conventional techniques such as metal organic chemical vapor deposition and molecular beam epitaxy.