Abstract
Sn-doped ZnO thin films have been prepared with magnetron co-sputtering. The results indicate that this method can improve the micro-structure of films and enhance its photoelectric performance. The structure and surface morphology results indicate that all the doped films show the preferred orientation (0 0 2), the roughness can decrease to 1.81 nm at 15 W with increasing DC power, the carrier concentration, resistivity decreases, and mobility can reach 7.99×1019 cm−3, 1.27×10−4 Ω·cm and 1047.5 cm2/Vs, respectively, and the observed optical band gap can increase to increase to 3.85 eV.
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