Abstract
The Sn-doped ZnO thin films were deposited on glass and ITO by sol gel Spin Coating technique. The Structural and electrical properties of Sn-doped ZnO thin films were studied and discussed. The Sn-doped ZnO thin film particle sizes were decreased whenever the doping concentration increased. Besides that, the resistivity 7.7 x 102 Ω.cm was obtained at 2 at.% Sn-doped thin films and aligned ZnO nanorod arrays with large surface area were grown on 2 at.% Sn-doped ZnO film. Therefore, dye sensitized solar cell at 2.0 at.% Sn-doped ZnO thin films with aligned ZnO Nanorod arrays have improved in the photocurrent density and conversion efficiency.
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