Abstract
The results of Rutherford backscattering analysis, Auger electron spectroscopy, transmission electron microscopy and X-ray diffraction analysis of the surface aluminium layer after carbon implantation are presented in this work. The energy of implanted ions was 20 keV, the implantation dose varied in the range of 0.4–4.0×10 17 ions/cm 2. The growth of carbon implantation dose resulted in an increase of carbon concentration over the stoichiometric level. Phase composition analysis showed that carbon implantation led to the formation of a Al 4C 3 compound. The possible mechanism of carbide formation based on ion-induced crystallisation was proposed. The behaviour of stress induced by carbon implantation in the aluminium lattice was also discussed.
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