Abstract
Herein, we report the preparation of Sm 3+ (0, 1, 4, and 5%) doped Ca 3 (VO 4 ) 2 phosphor by the combustion process. The XRD result ascertains the rhombohedral crystal structure with symmetry described by the space-group of R 3c for all the samples. The crystallite size of the phosphors is in the range of 46.5 to 50 nm. Absorption analysis manifests that all samples have near UV absorption at 290 nm which is ascribed to the ligand to metal charge transfer band (CTB), formed as a consequence of electron transfer from O 2– to V 5+ in [VO 4 ] 3- tetrahedral. The bandgap of the host phosphor is 3.70 eV and decreases after Sm 3+ doping. The decrease in the bandgap is because of the formation of the defect energy levels in the bandgap of the host. The FTIR analysis confirms all the infrared modes present in the phosphors. The PL analysis ascertains the occurrence of emission peaks for Sm 3+ doped Ca 3 (VO 4 ) 2 . These 4f-4f transition peaks are ascribed to 4 G 5/2 to 6 H J (J = 5/2, 7/2, 9/2, and 11/2) electronic transitions of Sm 3+ ions. The calculated lifetime of the 4 G 5/2 energy level of Sm 3+ ion for 4% doped Ca 3 (VO 4 ) 2 is 0.66 ms. Here we have discussed the consequence of Sm 3+ doping on the structure and photoluminescence characteristics of the Ca 3 (VO 4 ) 2 phosphor. Thus, our analysis of Sm 3+ doped Ca 3 (VO 4 ) 2 phosphor ascertains that it has potential application in various optoelectronic devices such as LEDs and plasma panels.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call