Abstract

High resolution X-ray diffraction (HRXRD) and Photoluminescence (PL) spectroscopies have been utilized to achieve structural and optical BInGaAs/GaAs quantum well properties, grown by metal organic vapor phase epitaxy (MOVPE). A significant fraction of indium (36% and 46%) has been incorporated into BGaAs which show that a BxInyGa1-x-yAs can be grown lattice matched to GaAs. At room temperature PL energy emission is at 1.19eV for lower indium composition and 1.14eV for the higher. It has been revealed that the PL band shifts significantly to low energy side to 50meV with increasing indium solid composition. This confirms that the BInGaAs semiconductor material is well suited for active cell layers in multi-junction solar emitting near 1.1eV.

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