Abstract
25% Zinc doped Cadmium Telluride thin films were prepared using Stacked Elemental Layer method. The structural studies were conducted by the X-Ray technique and the results were compared with standard data which confirmed the presence of mixed phases (CdTe, ZnTe and CdZnTe) in the stack annealed at 425°C. Transmittance spectra depicted the effect of Zn on the optical properties of CdTe thin film. The calculated band gaps from the transmittance spectra were lie between 1.42 and 1.51eV. Scanning Electron Microscope images elucidated the influence of Zn on surface morphology and the grain growth for CdTe thin films.
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