Abstract
Thin film based gas sensor is an advanced application of thin film especially Ga2O3 (GO) thin film gas sensor is useful for high temperature gas sensor. The effect of moisture or environment on thin film properties has more influence on gas sensing properties. Radio Frequency sputtered Ga2O3 thin film was synthesized and processed in ultra-high pure hot water at 95 °C for different time durations. The structural properties were verified by the Xray Diffraction technique and the observed spectra revealed the formation of hydroxyl compound of Gallium (Gallium Oxide Dueterate – GOD) on the surface of the thin film and evidenced for structural defects as an effect of moisture. Decreased crystallite size and increased dislocation density was showed the crystal defects of prepared film. From the Ultra Violet – Visible spectra, decreased optical transmittance was noticed for various processing time. The formation of needle like GOD was confirmed using Field Emission Secondary Electron Microscope (FESEM) images.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.7186
Highlights
In recent years resistive gas sensors based on metaloxide semiconductors have been investigated intensively, for sensing oxygen or harmful gases in a wide range of temperatures from room temperature up to 1000 °C [1]
All the XRD peaks have been indexed thereby confirming the formation of β-Ga2O3 monoclinic structure (JCPDS Card No 760573) along with gallium oxide deuterate (JCPDS Card No 700537)
In our hot water process, the OH groups are adsorbing on the surface of Ga2O3 thin film and forming the gallium oxide deuterate as trace basis which is already confirmed by observing a strong peak nearly at ~ 2θ = 21° in XRD spectra
Summary
In recent years resistive gas sensors based on metaloxide semiconductors have been investigated intensively, for sensing oxygen or harmful gases in a wide range of temperatures from room temperature up to 1000 °C [1]. After coating of Ga2O3 thin film, no report has been published about the further oxidation behavior in moisture based environment. Qiu et al [10] have discovered and reported on the synthesis of crystalline ZnO film by direct reaction of ultra-high pure water and metallic Zn film. Our group has studied the influence of ultra-high pure hot water on the properties of various oxide thin films. In order to understand more, it is necessary to study the influence of hot moisture condition or hot water for various process times on the properties of Ga2O3 thin film surface at moderate temperature. The prepared Ga2O3 thin film is processed in ultra-high pure hot water for different time durations and reported their structural and optical properties
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
