Abstract
Te doped CdS films are prepared by co-evaporating Tellurium (Te) and Cadmium sulfide (CdS) in a domestic vacuum system. Results of X-ray diffraction (XRD) and Atomic Force Microscope (AFM) show improved crystallinity and surface smoothness at trace Te dopant while the band gap and transmittance maximum remains almost unchanged. Combination of CdS LO and CdTe LO phonon is observed, indicating the well dispersion of Te.
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