Abstract
ZnO/TiO2 and TiO2/ZnO thin films have been deposited on single crystal Si (100) substrate using pulsed laser deposition (PLD) technique in order to improve structural and optical properties of ZnO and TiO2 thin films. It was observed that the deposition of TiO2 film prior to ZnO, exhibited higher crystallinity along (002) diffraction peak, small compressive strain and stress and thereby rendering better optical properties as compared to ZnO films deposited directly on Si substrates. On the other hand, TiO2 thin film deposited on Si substrate exhibited pure anatase phase while the use of ZnO buffer was found to improve the crystallinity of TiO2 thin film. The photoluminescence spectra showed that TiO2 and ZnO buffer layers enhanced ultraviolet emissions of the ZnO and TiO2 thin films to a larger extent, respectively.
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