Abstract
AbstractIndium‐rich Inx Ga1‐x N islands (x ≥ 0.87) grown by metalorganic chemical vapor deposition at growth temperatures ranging from 550‐750 °C were investigated. With the increasing growth temperature, the InGaN dot size increases while the dot density decreases due to the enhanced surface migration of In/Ga adatoms at elevated temperatures. In addition, the composition of InGaN islands was also found to be varied with the growth temperature. At lower growth temperatures, a higher Ga content can be achieved due to the relatively lower migration ability of Ga adatoms. At higher growth temperatures, the deposited InGaN material tend to decompose into In‐rich islands and a thin Ga‐rich layer. Photoluminescence investigations show that these In‐rich islands exhibit a near‐infrared emission band. For samples grown at higher temperatures, a visible emission band was also observed. The visible emission band may arise from defect bands introduced during the formation of Ga‐rich InGaN layer. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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