Abstract
Data are presented from an investigation of the thermal stability and interfacial abruptness as a function of growth temperature for InAsGaAs strained layer interfaces grown by metalorganic chemical vapor deposition. Transmission electron microscopy data show symmetric abrupt InAsGaAs interfaces at lower growth temperatures and asymmetry at higher growth temperatures. The relationship of the asymmetry to the growth process, and not to interdiffusion, is confirmed by analysis of samples grown at lower temperature and annealed at higher temperatures.
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