Structural and optical properties of Cu2SnS3 and Cu3SnS4 thin films by successive ionic layer adsorption and reaction

Abstract

Thin films of Cu2SnS3 and Cu3SnS4 were obtained by sulfurizing (Cu, Sn)S structured precursors prepared by successive ionic layer absorption and reaction method. The results of energy dispersive spectroscopy (EDS) indicate that some loss in Sn with increasing sulfurization temperature. For the sulfurization temperatures of 380, 400 and 500 °C, tetragonal (I-42m) Cu2SnS3, cubic (F-43m) Cu2SnS3 and tetragonal (I-42m) Cu3SnS4 were formed, respectively. The combination of X-ray diffraction (XRD) results and Raman spectroscopy reveals that there are small Cu2−x S phase existing in the CTS thin films (400 and 500 °C). Scanning electron microscopy was used to study the morphology of the layers. The ternary compounds present a high optical absorption coefficient (>104 cm−1). The band gap energy (E g ) of the CTS thin films is estimated by reflection spectroscopy. The ternary compounds present a high optical absorption coefficient (>104 cm−1). The estimated band gap energy (E g ) is 1.05 eV for tetragonal (I-42m) Cu2SnS3, 1.19 eV for cubic (F-43m) Cu2SnS3, and 1.22 eV for tetragonal (I-42m) Cu3SnS4.