Abstract
CdZnXS1-X thin films with different composition have been deposited on glass substrate by by the spray pyrolysis method at RT using CdCl2 (0.1M),ZnCl2(0.1M)and H2NCSNH2(0.1M)solution and a substrate temperature of ( 400±20°C). X-ray diffraction studies reveal that the films are polycrystalline in nature with hexagonal structure and preferential orientation along (002) . The grain size of the films is found to increase form (37.397 to 46.902) nm with increasing Zinc concentration while the strain and the dislocation density of the films are found to decrease from (7.15 to 4.54) 10 4 rad and from (3.82 to 1.93) 10 14 lines.m-2 respectively . The transmittance spectrums of CdZnxS1-x thin films reveal very pronounced interference effects for photon energies below the fundamental absorption edge by exhibiting interference pattern . The optical energy gap for CdZnxS1-x thin films increases and shifts towards the UV region as the Zn concentration in the films increased .
Highlights
Recent investigations have evoked considerable interest in ZnS thin films due to their vast potential for use in thin film devices such as photo luminescent and electroluminescent devices and more recently as n-type window layer hetero junction solar cells [1].Zinc sulfide has found wide use as a thin film coating in the optical and microelectronic industries
Thin film of ZnxCd1-xS are known to have properties in between those of Cadmium sulphide (CdS) and ZnS .Because The addition of Zinc to cadmium sulphide has resulted in very interesting properties related to photo electrochemistry and optoelectronics [5], because the ternary materials provide a possibility of tailoring their properties as per requirements and project themselves as important semiconducting materials for the applications in the field of device fabrication [6]
Similar results have been reported by Ghoneim [13]. It is clear from XRD patterns of in ZnxCd1-xS thin films, that the full width at half maximum (FWHM) decreases with the increasing of Zn concentration in these films
Summary
Recent investigations have evoked considerable interest in ZnS thin films due to their vast potential for use in thin film devices such as photo luminescent and electroluminescent devices and more recently as n-type window layer hetero junction solar cells [1].Zinc sulfide has found wide use as a thin film coating in the optical and microelectronic industries. 0 , 0.25, 0.5 , 0.75 &1 ) respectively , it is clear that there is a shift toward higher value of 2θ when composition (x) change from 0 to 1 .This shifting has been reported Rehana Zia [14] This shifting in the peak position with increasing composition (x) suggests that the lattice constants increase with the increasing in Zn concentration as listed in table (2) and calculated from the following equation [26] :. Similar results have been reported by Ghoneim [13] It is clear from XRD patterns of in ZnxCd1-xS thin films , that the full width at half maximum (FWHM) decreases with the increasing of Zn concentration in these films. Table 3: variation of the full width at half maximum, grain size, dislocation density and no.of crystals of ZnxCd1-xSthinfilms with composition(x)
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