Abstract
This paper describes structural and optical investigations of molecular beam epitaxy grown strained ZnSe/(Zn,Cd)Se quantum wells. Strain state, cadmium content, and quantum well layer thickness have a strong influence on the emission energy, which allows a luminescence tuning between 2.25 and 2.50 eV. Furthermore a ZnSe based microcavity structure completed with ZnS/YF 3 distributed Bragg mirrors was processed. These reflectors are an alternative to several epitaxial grown II-VI materials and other reported approaches with respect to oxide layers. A blueshift in the photoluminescence emission energy measured by angle resolved microcavity detuning indicates an influence of the cavity mode on the quantum well mode.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
