Abstract
Summary form only given. To explore the effect of different crystallographic orientations on electron spin relaxation processes in semiconductors, we investigate the MBE-growth, optical and electrical transport properties of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs substrates. Unlike the growth on [001] GaAs substrates, smooth ZnSe epilayers cannot be grown directly on a thermally cleaned [110] GaAs surface. However, upon a low-temperature grown GaAs layer, the macroscopic morphological undulations due to misfit dislocations during [110] growth are significantly reduced, enabling the realization of two-dimensional electron gases of reasonable quality. The optimal growth protocols required for successful growth of [110] ZnSe/(Zn,Cd)Se quantum wells are discussed in detail. We demonstrate the fabrication of quantum wells and two-dimensional electron gases (2DEGs) of quality comparable to that obtained during [001] growth. Time resolved Faraday rotation measurements demonstrate an extended electronic spin lifetime at low temperatures.
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