Abstract
The structural and optical properties of thin films of copper indium sulphoselenide (CuInS x Se 2− x ) prepared by the electrodeposition technique are described. X-ray diffraction and energy-dispersive X-ray analysis showed that the films have a non-stoichiometric chalcopyrite structure with axial ration c/a≈1.96. The films deposited at a current density of about 1.0 mAcm −2 are found to be indium rich. The polycrystalline films have an absorption coefficient α≈10 4 cm −1 and their optical band gap varies between 1.20 and 1.47 eV and depends on deposition current density and electrolyte bath composition.
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