Abstract
Self-organized InAs and InGaAs quantum dashes have been investigated by chemically sensitive scanning transmission electron microscopy and photoluminescence spectroscopy. The quantum dashes exhibit a triangular cross section. Using electron energy loss spectroscopy, we show that no intermixing between quantum dashes and embedding barrier occurs during growth. By adjusting the nominal thickness of the InAs layer, the emission wavelength of the InAs quantum dashes can be tuned between 1.37 and 1.9 μm in a straightforward way.
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