Abstract
Structural properties of pristine and 3% Se doped SnTe were studied for thermoelectric applications. The solvothermal method is used to synthesizematerials. Powder XRD was used to investigate the crystal structure of synthesized materials. Pristine SnTe has FCC structure with Fm-3m space group. Secondary phase of SnSe was observed in SnTe0.97Se0.03. Electron density maps confirm the uniform distribution of basis at the crystal lattice sites. The distribution of nanoparticles in both materials is depicted using FESEM micrographs. Crystallite size decreases after Se doping in SnTe. In Se doped SnTe, lattice strains, stacking faults, and dislocation densities all increase. Secondary phase, nanoparticle formation and distortion in crystal structure can scatter phonons. The scattering of phonons reduces lattice thermal conductivity. Therefore Se doped SnTe can be an efficient material for thermoelectric device fabrication.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
