Abstract

We show that both the morphology and crystal structure of regioregular poly(3-hexylthiophene) (RR-P3HT) films in organic field effect transistor (OFET) devices with top surface contacts are altered, when an electric field is applied. Grazing incidence X-ray diffraction (GIXD) analysis reveals a dramatic decrease in structural order in the non-linear current regime and, by contrast, much less pronounced structural changes of the ( h 0 0) peaks in the linear current regime. Using for the first time resonance soft X-ray reflectivity (RSoXR) on RR-P3HT to avoid radiation damaged and to enhance the scope of the attained depth resolved information, we show that these changes are located in a several tens of nanometer thin sub-surface layer of the active polymer in the device. Furthermore, the RSoXR data reveal that the changes are strongly related to the C 1s → π ∗ and C 1s → σ ∗-resonances. In situ AFM measurements of the RR-P3HT device surface support the reciprocal space analysis results by showing a substantial softening and lateral expansion of the RR-P3HT films, when 20 V are applied between the contacts. These morphological and structural changes are partially reversible in nature.

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