Abstract
D022‐Mn3Ge has been studied recently for its large perpendicular magnetic anisotropy (PMA) and low magnetization, which enables it as a potential alternative material for the scaling of magnetic tunnel junctions (MTJs) used in spin‐transfer‐torque magnetic random access memory (STT‐MRAM). Most of the research was carried out on D022‐Mn3Ge deposited by molecular beam epitaxy (MBE) on single crystalline MgO substrates. As the use of single crystalline substrates is not compatible with an industrial integration flow, we developed a polycrystalline MgO seed layer by physical vapor deposition (PVD) on Si. PMA is observed in MBE‐grown D022‐Mn3Ge with coercive field up to 4.5 Tesla, even when the PVD‐MgO seed is only 1 nm thick. It indicates that PVD‐MgO is able to serve as the seed layer for D022‐Mn3Ge integration to MTJs. However, no PMA is observed in Mn3Ge grown by PVD, which is attributed to different kinetics taking place during PVD deposition.
Published Version
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