Structural and Magnetic Properties of Co-Doped MnxGe1–x Films Prepared by Magnetron Co-Sputtering

Abstract

Co-doped MnxGe1–x (Co–MnxGe1–x) (x = 0.02, 0.1, 0.3) films had been deposited at different sputtering powers on silicon (100) substrates using direct current (DC) and radio frequency (RF) magnetron co-sputtering. The films were characterized by X-ray diffraction (XRD), energy disperse X-ray (EDX), scanning electron microscope (SEM) and vibrating sample magnetometer (VSM). It was shown that the samples with low Mn content had polycrystalline cubic structure with an (220)-preferential orientation. The roughness of samples enhanced with the increase of Co content. In addition, we found that introducing Co can improve the ferromagnetism of the samples when sputtering power is 20 W. At the same time, the Co–MnxGe1–x (80W) films have a stronger ferromagnetic property due to the introduction of substantial Co atoms.