Abstract
The ferromagnetic phase transition in a MnAs film on GaAs(111), where the MnAs unit cell is epitaxially fixed in its hexagonal plane, proceeds under conditions qualitatively different from the transition in bulk MnAs crystals or in MnAs films on GaAs(001). We present experimental evidence for the coexistence between ferromagnetic and paramagnetic phases in a temperature interval of 10°C. Temperature dependencies of the phase fractions and the in-plane lattice parameters obtained by grazing incidence x-ray diffraction are compared with magnetization measurements.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
