Abstract
The results of structural and luminescent study of porous Si prepared by electrochemical etching and containing the pores of micron sizes are presented. The samples demonstrate bright luminescence with external quantum efficiency of 15–20%. Raman scattering spectra contain only one line corresponding to bulk silicon. Atomic force microscopy image shows the structural elements essentially larger than quantum confinement crystallites. However, X-ray diffraction measurements demonstrate the presence of strained Si quantum confinement nanowires. It is shown that the recombination through interface oxide-related centers of the carriers excited due to light absorption in quantum confinement nanowires gives an essential contribution to emission spectra.
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