Abstract
The structural and photoluminescent (PL) properties of Zn 2(1− x ) Mn x SiO 4 (1 ⩽ x ⩽ 5) thin film phosphors grown using a pulsed laser deposition technique have been investigated. The effect of systematic variation of oxygen partial pressures (O 2 pp) (100, 300, 500 and 700 mTorr) during the growth of these thin films has been studied. Thin film grown on silicon substrate at 750 °C and in situ annealed in 300 mTorr of O 2 pp exhibits superior PL property; ex situ annealing at higher temperatures improves the PL intensity.
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