Abstract
Photoluminescent properties of ZnGa2O4 : Mn phosphor thin films grown on Si and quartz substrate using the pulsed laser deposition technique under different deposition conditions (i.e. oxygen partial pressure and substrate temperature) are reported. The charge transfer band (283 nm) excitation of the phosphor exhibited green emission (504 nm) due to electronic transition from 4G(4T1)–6S(6A1) of 3d5 Mn2+ ions. The SEM image with elemental composition analysis shows a change in the film porosity and the Ga/Zn ratio with respect to variation in the oxygen partial pressure during the growth of the thin films at a constant temperature (650 °C). The changes in the emission intensity of the films are attributed to the variation in oxygen and Zn content (low vapour pressure) with respect to the change in O2 partial pressure.
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