Abstract
We report on the structural and electroluminescence characteristics of blue and cyan a-plane InGaN/GaN light-emitting diodes (LEDs). Cross-sectional transmission emission microscopy revealed the generation of occasional “asymmetric V-defects” in the active region. The blue and cyan LEDs exhibited rectifying behavior with forward voltages of 2.4 and 3.5 V at 20 mA, respectively and series resistances of 7 and 8 Ω, respectively. On-wafer dc output powers as high as 1.8 and 1.0 mW were measured at a drive current of 300 mA for the blue and the cyan LEDs, respectively. Electroluminescence measurement revealed an initial blue shift in the emission wavelength with the increase in the drive current. We speculate that the emission wavelength shift is due to the band-filling effect as a result of localization in the inclined non-{1120} oriented facets, which are polar in nature.
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